Refereed papers

S. W. Tan and S. W. Lai, “A Current Transport Mechanism of Metal-Semiconductor-Metal GaAs Diodes with Mixed Contacts of Pd and SiO2”, Advances in Materials Science and Engineering, vol. 2013, Article ID 531573, 2013. SCI, Rank Factor: 196/232, Impact Factor: 0.415.

C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai and W. S. Lour, “Sensing properties of resistive-type hydrogen sensors with a Pd-SiO2 thin-film mixture”, International Journal of Hydrogen Energy, vol. 38, pp. 313–318, 2013. SCI, Rank Factor: 30/127, Impact Factor: 4.057

S. W. Tan and S. W. Lai, “Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode”, PLoS ONE, vol. 7, Article ID e50681, 2012. SCI, Rank Factor: 12/85, Impact Factor: 4.092.

S. W. Tan and S. W. Lai, “Experimental characterization and modeling analysis on npn AlGaN/GaN HBT with high ideality factor in both collector and base current”, Surface Review and Letters, vol. 19, Article ID 1250043, 2012. SCI, Rank Factor: 60/69, Impact Factor: 0.493.

S. W. Tan and S. W. Lai, “Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment”, Advances in Materials Science and Engineering, vol. 2012, Article ID 654762, 2012. SCI, Rank Factor: 196/232, Impact Factor: 0.415.

C. Lo, S. W. Tan, C. Y. Wei, J. H. Tsai, K. Y. Hsu and W. S. Lour, “Unidirectional sensing characteristics of structured Au–GaN–Pt diodes for differential-pair hydrogen sensors”, International Journal of Hydrogen Energy, vol. 37, pp. 18579–18587, 2012. SCI, Rank Factor: 30/127, Impact Factor: 4.057.

Conference Papers

S. W. Tan, S. W. Lai, W. S. Lour and J. H. Tsai “Depletion- and Enhancement-Mode Self-Aligned InGaP/GaAs Heterojunction Doped-Channel FET”, ECS, Montreal, 2011.

J. H. Tsai, W. C. Yang, W. S. Lour and S. W. Tan “Metal-Semiconductor-Metal (MSM) Type of GaN-based Hydrogen Sensors with Pd-SiO2 Mixture Electrodes”, ECS, Montreal, 2011.

S. W. Tan, C. W. Liao, S. W. Lai, C. W. Liao and C. S. Lin “The Sidewall Effects of Three-Terminal Phototransistors”, ECS, San Francisco, 2009.